DatasheetsPDF.com

NTE6086 Dataheets PDF



Part Number NTE6086
Manufacturers NTE Electronics
Logo NTE Electronics
Description Silicon Dual Schottky Rectifier
Datasheet NTE6086 DatasheetNTE6086 Datasheet (PDF)

NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total (10 Amps Pre Diode Leg) D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings (Per Diode Leg): Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . .

  NTE6086   NTE6086


Document
NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total (10 Amps Pre Diode Leg) D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings (Per Diode Leg): Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Average Rectified Forward Current (VR = 100V, TC = +133°C), IF(AV) . . . . . . . . . . . . . . . . . . . . . . 10A Peak Repetitive Forward Current (VR = 100V, Square Wave, 20kHz, TC = +133°C), IFRM . . . . 20A Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 150A Peak Repetitive Reverse Current (2µs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Voltage Rate of Change (VR = 100V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics (Per Diode Leg): (Note 1) Parameter Instantaneous Forward Voltage Symbol vF Test Conditions iF = 10A, TC = +125°C iF = 10A, TC = +25°C iF = 20A, TC = +125°C iF = 20A, TC = +25°C Instantaneous Reverse Current iR VR = 100V, TC = +125°C VR = 100V, TC = +25°C Min – – – – – – Typ – – – – – – Max 0.70 0.80 0.85 0.95 150 0.15 Unit V V V V mA mA Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. .147 (3.75) Dia Max .110 (2.79) .392 (9.95) .185 (4.7) .054 (1.38) .245 (6.22) K .6.08 (15.42) Max .269 (6.83) Max .040 (1.02) A K A .500 (12.7) Min .100 (2.54) .018 (0.48) .


NTE6084 NTE6086 NTE6087


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)