NTE601

NTE601 Silicon Varistor Temperature Compensating Diode Features: D High reliability planar chip and glass sealing D Low IR D Large PD Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Forward Current, IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Reverse Current Forward Voltage Symbol IR VF –∆VF/∆T Test Conditions VR = 6V IF = 1.5mA IF = 50mA Forward Voltage Change with Respect to Temperature IF = 1.5mA Min – 0.59 – – Typ – – – 2.0 Max 10 0.64 1.1 – Unit µA V V mV/°C .099 (2.51) Max .099 (2.51) Max .080 (2.03) Dia Max .022 (0.56) Max .500 (12.7) Min .118 (3.0) Max .500 (12.7) Min Color Band Denotes Cathode ...