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NTE570

NTE Electronics

Silicon Controlled Avalanche Diode

NTE570 Silicon Controlled Avalanche Diode Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . ...


NTE Electronics

NTE570

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NTE570 Silicon Controlled Avalanche Diode Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Allowable Avalanche Current (Square Wave Single Pulse 100µs), IZSM . . . . . . . . . . . . . . . . . . . 1.0A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Avalanche Voltage Reverse Current Reverse Current (High Temperature) Temperature Dependency of VZ Symbol VZ IR IR(H) J Test Conditions IZ = 1mA Instantaneous VR = 130V VR = 130V, TA = +100°C IZ = 1mA Min 135 – – – Typ – – – 0.15 Max 180 10 50 – Unit V µA µA V/°C 1.070 (27.2) Min .291 (7.4) Max .032 (0.83) Dia Max Color Band Denotes Cathode .165 (4.2) Dia Max ...




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