TLP421

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP421 Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits TLP421 Unit in mm The TOSHIBA TLP421 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577 BSI approved: BS EN60065: 2002 Approved no.8411 BS EN60950-1: 2002 Approved no.8412 SEMKO approved: EN60065, EN60950, EN60335 Approved no.9910249/01 TOSHIBA Weight: 0.26 g 11−5B2 Pin Configurations (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2007-10-01 Option(D4)type TÜV approved: DIN EN 60747-5-2 Approved no. R9950202 Maximum operating insulation voltage: 890VPK Maximum permissible overvoltage: 8000VPK (Note): When a EN 60747-5-2 approved type is needed, please designate the “Option(D4)” Making the VDE application: DIN EN 60747-5-2 Construction mechanical rating 7.62mm Pitch 10.16mm Pitch Typical Type TLPxxxF Type Creepage distance 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) TLP421 Current Transfer Ratio Type TLP421 Classi− fication (*1) (None) Rank Y Rank GR Rank BL Ran...