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PS2581L2 Dataheets PDF



Part Number PS2581L2
Manufacturers NEC
Logo NEC
Description LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER
Datasheet PS2581L2 DatasheetPS2581L2 Datasheet (PDF)

DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting. FEATURES • Long creepage and clearance distance (8 mm) • Hi.

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DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting. FEATURES • Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. 101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved ORDERING INFORMATION Part Number PS2581L1 PS2581L2 PS2581L2-E3, E4 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP taping Package Safety Standard Approval UL, CSA, BSI, NEMKO, DEMKO, SEMKO, FIMKO, VDE approved Application Part Number PS2581L1 PS2581L2 *1 *1 As applying to Safety Standard, following part number should be used. The information in this document is subject to change without notice. Document No. P12809EJ2V0DS00 (2nd edition) Date Published June 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1997 PS2581L1,PS2581L2 PACKAGE DIMENSIONS (in millimeters) PS2581L1 4.6±0.35 1.0±0.2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 7.62 3.2±0.4 4.15±0.4 0.35 3.5±0.3 6.5+0.5 –0.1 2.54 0.50±0.1 0.25 M 0 to 15˚ 1.25±0.15 PS2581L2 4.6±0.35 1.0±0.2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 6.5+0.5 –0.1 10.16 7.62 3.5±0.3 0.25±0.2 1.25±0.15 0.25 M 0.9±0.25 2.54 12.0 MAX. PHOTOCOUPLER CONSTRUCTION Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Thickness Unit (MIN.) 8 mm 8 mm 4 mm 0.4 mm 2 PS2581L1,PS2581L2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Symbol IF VR Ratings 80 6 1.5 150 1 80 7 50 1.5 150 5 000 −55 to +100 −55 to +150 Unit mA V mW/°C mW A V V mA mW/°C mW Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 3 PS2581L1,PS2581L2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 *1 Symbol VF IR Ct ICEO CTR VCE(sat) RI-O CI-O tr tf Conditions IF = 10 mA VR = 5 V V = 0 V, f = 1.0 MHz VCE = 80 V, IF = 0 mA IF = 5 mA, VCE = 5 V IF = 10 mA, IC = 2 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 2 mA, RL = 100 Ω MIN. TYP. 1.17 MAX. 1.4 5 Unit V µA pF 50 100 80 200 400 0.3 10 11 nA % V Ω 0.5 3 5 pF µs *2 *1 CTR rank L : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time Pulse Input PW = 100 µ s Duty Cycle = 1/10 IF 50 Ω VOUT RL = 100 Ω VCC 4 PS2581L1,PS2581L2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 150 Diode Power Dissipation PD (mW) 100 100 50 50 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 Forward Current IF (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 70 Collector Current IC (mA) TA = +100 ˚C +60 ˚C +25 ˚C 60 50 40 50 mA 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 30 20 10 20 mA A m 10 IF = 5 mA 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (nA) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 10 000 Collector Current IC (mA) 1 000 VCE = 80 V 40 V 24 V 10 V 5V 10 5 50 mA 20 mA 10 mA 5 mA 2 mA 100 1 0.5 IF = 1 mA 10 1 – 50 –25 0 25 50 75 100 0.1 0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V) 5 PS2581L1,PS2581L2 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio CTR Current Tra.


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