Document
DATA SHEET
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC
TM
Series−
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
• Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. 101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved
ORDERING INFORMATION
Part Number PS2581L1 PS2581L2 PS2581L2-E3, E4 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP taping Package Safety Standard Approval UL, CSA, BSI, NEMKO, DEMKO, SEMKO, FIMKO, VDE approved Application Part Number PS2581L1 PS2581L2
*1
*1 As applying to Safety Standard, following part number should be used.
The information in this document is subject to change without notice.
Document No. P12809EJ2V0DS00 (2nd edition) Date Published June 1998 NS CP(K) Printed in Japan
The mark • shows major revised points.
©
1997
PS2581L1,PS2581L2
PACKAGE DIMENSIONS (in millimeters)
PS2581L1
4.6±0.35 1.0±0.2 4
TOP VIEW
3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 7.62
3.2±0.4
4.15±0.4
0.35
3.5±0.3
6.5+0.5 –0.1
2.54
0.50±0.1 0.25 M 0 to 15˚
1.25±0.15
PS2581L2
4.6±0.35 1.0±0.2 4
TOP VIEW
3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2
6.5+0.5 –0.1
10.16 7.62
3.5±0.3 0.25±0.2
1.25±0.15 0.25 M
0.9±0.25 2.54 12.0 MAX.
PHOTOCOUPLER CONSTRUCTION
Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Thickness Unit (MIN.) 8 mm 8 mm 4 mm 0.4 mm
2
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor
*1
Symbol IF VR
Ratings 80 6 1.5 150 1 80 7 50 1.5 150 5 000 −55 to +100 −55 to +150
Unit mA V mW/°C mW A V V mA mW/°C mW Vr.m.s. °C °C
∆PD/°C
PD IFP VCEO VECO IC
Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation
∆PC/°C
PC BV TA Tstg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time
*2 *1
Symbol VF IR Ct ICEO CTR VCE(sat) RI-O CI-O tr tf
Conditions IF = 10 mA VR = 5 V V = 0 V, f = 1.0 MHz VCE = 80 V, IF = 0 mA IF = 5 mA, VCE = 5 V IF = 10 mA, IC = 2 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 2 mA, RL = 100 Ω
MIN.
TYP. 1.17
MAX. 1.4 5
Unit V
µA
pF
50 100 80 200 400 0.3 10
11
nA % V Ω
0.5 3 5
pF
µs
*2
*1 CTR rank L : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time
Pulse Input PW = 100 µ s Duty Cycle = 1/10 IF 50 Ω VOUT RL = 100 Ω VCC
4
PS2581L1,PS2581L2
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
150
150
Diode Power Dissipation PD (mW)
100
100
50
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
Ambient Temperature TA (˚C)
FORWARD CURRENT vs. FORWARD VOLTAGE
100 50
Forward Current IF (mA)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
70
Collector Current IC (mA)
TA = +100 ˚C +60 ˚C +25 ˚C
60 50 40
50 mA
10 5 0 ˚C –25 ˚C –55 ˚C
1 0.5
30 20 10
20
mA A m 10
IF = 5 mA
0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current ICEO (nA)
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
40
10 000
Collector Current IC (mA)
1 000
VCE = 80 V 40 V 24 V 10 V 5V
10 5
50 mA 20 mA 10 mA
5 mA
2 mA
100
1 0.5
IF = 1 mA
10
1 – 50 –25 0 25 50 75 100
0.1 0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (˚C)
Collector Saturation Voltage VCE(sat) (V)
5
PS2581L1,PS2581L2
NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR Current Tra.