PS12012-A Datasheet PDF - Powerex Power

MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS12012-A PS12012-A FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE PS12012-A INTEGRATED FUNCTIONS AND FEATURES 3-Phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies. Circuit for dynamic braking of motor regenerative energy. Inverter output current capability Io (Note 1) : Type Name PS12012-A 100% load 1.2A (rms) 150% over load 1.8A (rms), 1min (Note 1) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the above loading cases is defined as : Iop = Io ! √ 2 INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS: For P-Side IGBTs : Drive circuit, High-speed photo-couplers, Short circuit protection (SC), Bootstrap circuit supply scheme (Single drive power supply ) and Under-voltage protection (UV). For N-Side IGBTs : Drive circuit, Short-circuit protection (SC), Control supply Under voltage and Over voltage protection (OV/UV), System Over temperature protection (OT), Fault output signaling circuit (Fo), and Current-Limit warning signal output (CL). For Brake circuit IGBT : Drive circuit. Warning and Fault signaling : FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through. FO2 : N-side control supply abnormality locking (OV/UV) FO3 : System over-temperature pro...