DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D121
PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes
Product specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D121
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
Product specification Supersedes data of 1996 May 03 1999 Apr 22
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed glass SMD package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are
Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
PRLL5817; PRLL5818; PRLL5819
handbook, halfpage
k
a
MAM190
Fig.1 Simplified outline (SOD87) and symbol.
MARKING TYPE NUMBER PRLL5817 PRLL5818 PRLL5819 9 9 9 MARKING CODE
1999 Apr 22
2
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PRLL5817 PRLL5818 PRLL5819 VRSM non-repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRRM repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRWM crest working reverse voltage PRLL5817 PRLL5818 PRLL5819 IF(AV) IFSM Tstg Tj average forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 60 °C t = 10 ms half sine wave; Tj = Tj max prior to surge: VR = 0 −...