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PPC5001T Dataheets PDF



Part Number PPC5001T
Manufacturers Philips
Logo Philips
Description NPN microwave power transistor
Datasheet PPC5001T DatasheetPPC5001T Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and ex.

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DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance handbook, halfpage PPC5001T PINNING - SOT447A PIN 1 2 3 base emitter collector DESCRIPTION 3 APPLICATIONS Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package. 2 Side view Marking code: 395 MAM331 c 1 b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in an oscillator circuit up to 5 GHz; typical values. MODE OF OPERATION Class A (CW) f (GHz) 5 VCE (V) 20 IC (mA) 200 PL (mW) 450 1997 Mar 03 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. At 0.1 mm from the case. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tamb ≤ 75 °C CONDITIONS open emitter RBE = 70 Ω open emitter open collector − − − − − − −65 − − MIN. PPC5001T MAX. 40 35 16 3 0.25 4 +200 200 235 UNIT V V V V A W °C °C °C handbook, 5 MGD975 Ptot max (W) 4 3 2 1 0 0 50 100 150 200 Tmb (°C) Fig.2 Power dissipation derating as a function of mounting-base temperature. 1997 Mar 03 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 75 °C PPC5001T MAX. 24 UNIT K/W CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO V(BR)CBO V(BR)CER Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current collector-base breakdown voltage collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 24 V; IE = 0 VEB = 1.5 V; IC = 0 IC = 500 µA; IE = 0 VCB = 18 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 18 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz − − 40 35 − − − MIN. − − − − 1.4 0.9 5.5 TYP. MAX. 100 200 − − − − − UNIT µA nA V V pF pF pF collector-emitter breakdown voltage IC = 2.5 mA; RBE = 70 Ω 1997 Mar 03 4 Philips Semiconductors Product specification NPN microwave power transistor PPC5001T handbook, full pagewidth 1 0.5 2 8 GHz 0.2 5 10 +j 0 −j 10 5 0.2 5 6 0.2 0.5 1 2 5 10 7 ∞ 0.5 1 VCE = 20 V; IC = 200 mA; Zo = 50 Ω. 2 MGL033 Fig.3 Emitter reflection coefficient. handbook, full pagewidth 1 0.5 8 GHz 2 0.2 5 7 5 10 +j 0 −j 0.2 6 0.5 1 2 5 10 ∞ 10 0.2 5 0.5 1 VCE = 20 V; IC = 200 mA; Zo = 50 Ω. 2 MGL034 Fig.4 Base reflection coefficient 1997 Mar 03 5 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE Flangeless ceramic package; 2 leads PPC5001T SOT447A A D B A1 3 L E1 E 1 G seating plane L 2 b w M A Q c 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) A1 A UNIT E E1 b c D max. max. mm 2.8 1.3 0.58 0.1 2.8 2.64 2.38 3.61 3.35 G L max. min. 3.8 3.1 Q 1.7 w 0.2 OUTLINE VERSION SOT447A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Mar 03 6 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PPC5001T This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, d.


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