PNZ312D

PIN Photodiodes PNZ312D Dual Division Silicon PIN Photodiode For optical information systems Features Fast response : tr, tf = 10 ns (typ.) 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.1 ø3.2 Dep. 0.1(typ.) 10˚ 5.0±0.1 2.54±0.1 4 3 1.8±0.3 1.0±0.2 Unit : mm Good photo current linearity Low dark current : ID = 20 nA (max.) Small size plastic package (flat type) Adoption of visible light cutoff resin A B 4-0.6 +0.1 –0.2 4-0.5±0.1 1 10˚ 2 10˚ 1.0 1.0 10˚ 0.2 +0.1 –0.05 0.6 Auto focus sensor for still cameras and video cameras etc. Distance measuring systems Position sensor for automatic assembly lines Eye sensor for industrial robots 5˚ 5˚ 0.2 Applications 1: Anode A 2: Common Cathode 3: Anode B 4: Common Cathode Note) The PNZ312D package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 30 –25 to +85 –30 to +100 Unit V mW ˚C ˚C Dimensions of detection area 3.5 1.6 1.6 0.04 Unit : mm 1.35 1.0 A B Electro-Optical Characteristics (Ta = 25˚C) Parameter Reverse voltage (DC) Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle Symbol VR ID IL*3 λP tr, tf*2 Ct θ IR = 10µA VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, f = 1MHz Measured from the optical ...