PNZ1270

Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board 2.8±0.2 1.05±0.1 Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 1 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Fast response : tr = 2.5 µs (typ.) R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 0.85 ± 0.15 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L)*3 λP θ tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω min 0.8 typ 1 800 14 2.5 3.5 max 100 19.2 Unit nA mA nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to incre...