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PNZ126S

Panasonic Semiconductor
Part Number PNZ126S
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published May 9, 2005
Detailed Description Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity G...
Datasheet PDF File PNZ126S PDF File

PNZ126S
PNZ126S

Overview
Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity Good collector photo current linearity with respect to optical power input Fast response : tr = 2.
5 µs (typ.
) Small size (ø 3) ceramic package 4.
1±0.
3 2.
0±0.
2 ø3.
0±0.
2 12.
5 min.
Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collect...


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