PNZ109CL

Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package ø5.75 max. ø4.2±0.2 45± Resin to cutoff visible light is used 3˚ 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Rise time Fall time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 500 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 min 2.5 typ 0.05 4 900 80 5 6 0.3 max 2 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VC...