PNA3602L

PIN Photodiodes PNA3602L PIN Photodiode Unit : mm For optical control systems 4.5±0.3 1.2 Not soldered 2.9±0.25 ø2.4 3.9±0.3 2.4 1.5 Features High quantum efficiency High-speed response Small size, thin side-view type package 12.8 min. 0.9 1.7±0.2 0.8 2.8 2-1.2±0.3 2-0.45±0.15 1 2.54 2 0.45±0.15 R1.2 R0.6 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 –25 to +85 –30 to +100 Unit V mW ˚C ˚C 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle *1 *2 Symbol ID IL λP tr, tf*2 Ct θ VR = 10V Conditions VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50Ω VR = 10V, f = 1MHz Measured from the optical axis to the half power point min 16 typ 0.1 850 2 6 45 max 10 Unit nA µA nm ns pF deg. Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) λP = 800nm 50Ω ,, ,, ,, ,, 1 PNA3602L PIN Photodiodes IL — L 10 2 10 3 10 VR = 10V I...