PNA2602M

Darlington Phototransistors PNA2602M Darlington Phototransistor Unit : mm ø3.5±0.2 4.8±0.3 2.4 2.4 4.5±0.3 Not soldered For optical control systems Features Darlington output, high sensitivity 36.6±0.5 4.2±0.3 2.3 1.9 Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package Long lead and visible light cutoff design with PN205 2-1.12 2-0.45±0.15 2-0.4±0.15 2-0.6±0.15 2-0.45±0.15 2.2±0.2 14.5 2.95 1.0 1.2 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 –25 to +80 –30 to +100 Unit V V mA mW ˚C ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO SIR θ tr, tf*2 VCE(sat) *1 *1 Conditions VCE = 10V VCE = 10V, H = 3.75 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, IC = 1mA, RL = 100Ω IC = 100µA, H = 3.75 µW/cm2 µW/cm2 min 0.1 typ max 0.5 3.0 Unit µA mA nm deg. µs λP 850 35 150 1.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay tim...