PNA1801L

Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm Not soldered 2.0 max. For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package 15.0±1.0 4.5±0.3 ø3.8±0.2 ø3.0±0.2 5.0±0.2 0.6 2-0.8 max. 2-0.5±0.1 2 0.5±0.1 1.0 (1.5) 1 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 30 5 20 100 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 1.7 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 0.8 typ 0.005 3 800 35 4 0.2 max 0.5 Unit µA mA nm deg. µs 0.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final va...