PN4416

DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES Low noise Interchangeability of drain and source connections High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT54 (TO-92). PIN 1 2 3 gate source drain DESCRIPTION IDSS Ptot VGS(off) QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A drain current total power dissipation gate-source cut-off voltage PN4416 PN4416A  Yfs  common-source transfer admittance PN4416; PN4416A CONDITIONS MIN. MAX. UNIT − − 30 35 15 400 V V mA mW VDS = 15 V; VGS = 0 5 up to Tamb = 25 °C VDS = 15 V; ID = 1 nA − −2.5 VDS = 15 V; VGS = 0; f = 1 kHz 4.5 − −6 −6 7.5 V V mS 1 handbook, halfpage 2 3 g MAM042 d s Fig.1 Simplified outline and symbol. December 1997 2 Philips Semiconductors Product specification N-channel field-effect transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A VGSO gate-source voltage PN4416 PN4416A VGDO gate-drain voltage PN4416 PN4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 °C (note 1) −...