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PN4392 Dataheets PDF



Part Number PN4392
Manufacturers Philips
Logo Philips
Description N-channel silicon field-effect transistors
Datasheet PN4392 DatasheetPN4392 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET PN4391 to 4393 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1989 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interch.

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DISCRETE SEMICONDUCTORS DATA SHEET PN4391 to 4393 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1989 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 PN4391 to 4393 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tamb = 25 °C Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 RDS on max. 30 60 100 Ω −VGS off min. max. 4 10 2 5 0.5 V 3 V IDSS min. 50 25 5 mA Ptot max. PN4391 360 PN4392 PN4393 mW ± VDS max. 40 V RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Forward gate current (DC) Total power dissipation up to Tamb = 25 °C Storage temperature range Junction temperature Ptot Tstg Tj max. max. 360 −65 to+150 150 mW °C °C ± VDS −VGSO −VGDO IG max. max. max. max. 40 40 40 50 V V V mA April 1989 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PN4391 Reverse gate current −VGS = 20 V; VDS = 0 −VGS = 20 V; VDS = 0 Tamb = 100 °C Drain cut-off current −VGS = 12 V −VGS = 7 V −VGS = 5 V −VGS = 12 V −VGS = 7 V −VGS = 5 V VDS = 20 V IDSX IDSX IDSX IDSX IDSX IDSX max. max. max. max. max. max. min. max. min. min. max. max. max. max. max. 50 150 40 4.0 10 30 0.4 200 1.0 −IGSS max. 200 −IGSS max. 1.0 Rth j-a = PN4391 to 4393 350 K/W PN4392 1.0 200 PN4393 1.0 nA 200 nA nA 1.0 nA 1.0 nA nA VDS = 20 V; Tamb = 100 °C 200 nA 200 nA Drain saturation current VDS = 20 V; VGS = 0 Gate-source breakdown voltage −IG = 1 µA; VDS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 Drain-source on-voltage VGS = 0; ID = 12 mA VGS = 0; ID = 6 mA VGS = 0; ID = 3 mA VDS on VDS on VDS on V 0.4 V 0.4 V RDS on 60 100 Ω −VGS off 2.0 5.0 0.5 V 3.0 V −V(BR)GSS 40 40 V IDSS 25 100 5 mA 60 mA April 1989 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PN4391 Drain-source on-resistance VDS = 0 V; VGS = 0; f = 1 kHz; Ta = 25 °C Input capacitance VDS = 20 V; VGS = 0; f = 1 MHz; Ta = 25 °C Feedback capacitance VDS = 0; −VGS = 12 V VDS = 0; −VGS = 7 V VDS = 0; −VGS = 5 V Switching times test conditions VDD = 10 V; VGS = 0 to VGS off ID −VGS off RL Rise time Turn-on time Fall time Turn-off time tr ton tf toff = = = max. max. max. max. 12 12 750 5 15 15 20 f = 1 MHz Crss Crss Crss max. max. max. 5 Ciss max. 16 RDS on max. 30 PN4391 to 4393 PN4392 60 16 PN4393 100 Ω 16 pF pF 5 pF 5 pF 6.0 7.0 1550 5 15 20 35 3.0 mA 5.0 V 3150 Ω 5 ns 15 ns 30 ns 50 ns ok, halfpage VDD 10 nF 50 Ω 10 µF RL 1 µF VGS = 0 V Vi −VGS off 10% 90% toff tf 90% ton tr DUT 50 Ω SAMPLING SCOPE 50 Ω Vo MBK289 10% MBK288 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. April 1989 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PN4391 to 4393 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1989 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PN4391 to 4393 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any .


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