PN3646

PN3646 PN3646 NPN Switching Transistor Sourced from process 22. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continued Operating and Storage Junction Temperature Range Value 15 40 5.0 300 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CES BV(BR)CBO BV(BR)EBO ICES Parameter Test Condition IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA VCB = 5.0V, IE = 0, f = 1MHz VCB = 5.0V, IC = 0, f = 1MHz IC = 300mA, VCE = 10V, f = 100MHz 3.5 0.73 30 25 15 Min. 15 40 40 5.0 0.5 3.0 120 Max. Units V V V V µA µA Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base...