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PN300

Panasonic Semiconductor

Silicon PIN Photodiodes

PIN Photodiodes PNZ0300, PNZ300F Silicon PIN Photodiodes PNZ0300 ø4.6±0.15 Glass lens Unit : mm For optical control s...


Panasonic Semiconductor

PN300

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Description
PIN Photodiodes PNZ0300, PNZ300F Silicon PIN Photodiodes PNZ0300 ø4.6±0.15 Glass lens Unit : mm For optical control systems Features Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity and wide dynamic sensitivity 0 1. .2 ±0 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 Narrow directivity (PNZ0300) 0± 0. 15 3˚ 45± Wide directivity (PNZ300F) 1. 2 1 ø5.75 max. 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 50 100 –25 to +85 –30 to +100 Unit V mW ˚C 4.5±0.2 PNZ300F ø4.6±0.15 Unit : mm Glass window ˚C 12.7 min. 2-ø0.45±0.05 2.54±0.25 1. 0. 0± 2 15 3 45± 0± 0. ˚ 1. 2 1 ø5.75 max. 1: Anode 2: Cathode 1 PNZ0300, PNZ300F Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current PNZ0300 PNZ300F Symbol ID IL λP tr, tf PNZ0300 PNZ300F *2 PIN Photodiodes Conditions VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 20V, RL = 50Ω VR = 10V, f = 1MHz Measured from the optical axis to the half power point min 30 5 typ 0.1 55 7 800 1 7 10 40 max 10 Unit nA µA µA nm ns pF deg. deg. Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle *1 *2 Ct θ Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement c...




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