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PN2907 Dataheets PDF



Part Number PN2907
Manufacturers Philips
Logo Philips
Description PNP transistor
Datasheet PN2907 DatasheetPN2907 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PN2222A. 1 handbook, ha.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PN2222A. 1 handbook, halfpage PN2907A PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base CONDITIONS − − − − 100 200 − MIN. MAX. −60 −60 −600 500 300 − 365 MHz ns UNIT V V mA mW 1997 May 05 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. PN2907A MAX. −60 −60 −5 −600 −800 −200 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −50 V IE = 0; VCB = −50 V; Tamb = 125 °C IC = 0; VEB = −5 V IC = −0.1 mA; VCE = −10 V IC = −1 mA; VCE = −10 V IC = −10 mA; VCE = −10 V IC = −150 mA; VCE = −10 V IC = −500 mA; VCE = −10 V VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage IC = −150 mA; IB = −15 mA IC = −500 mA; IB = −50 mA base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = −150 mA; IB = −15 mA IC = −150 mA; IB = −50 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −2 V; f = 1 MHz − − − 75 100 100 100 50 − − − − − − MIN. MAX. −10 −10 −50 − − − 300 − −400 −1.6 −1.3 −2.6 8 30 − mV V V V pF pF MHz UNIT nA µA nA PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 250 UNIT K/W IC = −50 mA; VCE = −20 V; f = 100 MHz 200 1997 May 05 3 Philips Semiconductors Product specification PNP switching transistor PN2907A SYMBOL PARAMETER CONDITIONS ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − − − − − − MIN. MAX. UNIT Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time 40 12 30 365 300 65 ns ns ns ns ns ns handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MGD624 Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = 3.5 V; VCC = −29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 May 05 4 Philips Semiconductors Product specification PNP switching transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PN2907A SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 May 05 5 Philips Semiconductors Product specification PNP switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PN2907A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device .


PN2907 PN2907 PN2907A


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