DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PMSTA92; PMSTA93 PNP high-voltage transistors
Product specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PMSTA92; PMSTA93
PNP high-voltage
transistors
Product specification Supersedes data of 1996 Dec 09 1999 Jun 01
Philips Semiconductors
Product specification
PNP high-voltage
transistors
FEATURES High voltage. APPLICATIONS High voltage switching in telephony. DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: PMSTA42 and PMSTA43. MARKING TYPE NUMBER PMSTA92 PMSTA93 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) ∗2D ∗2E
1 Top view
handbook, halfpage
PMSTA92; PMSTA93
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
2
MAM048
Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PMSTA92 PMSTA93 VCEO collector-emitter voltage PMSTA92 PMSTA93 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −300 −200 −5 −100 −200 −100 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −300 −200 V V MIN. MAX. UNIT
1999 Jun 01
2
Philips Semiconductors
Product specification
PNP high-voltage
transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a ...