DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST5088; PMST5089 NPN general purpose transistors
Product s...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST5088; PMST5089
NPN general purpose
transistors
Product specification Supersedes data of 1997 May 22 1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 30 V). APPLICATIONS Low-noise input stages in audio equipment. DESCRIPTION
NPN transistor in a SC-70; SOT323 plastic package. MARKING TYPE NUMBER PMST5088 PMST5089 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5088 PMST5089 VCEO collector-emitter voltage PMST5088 PMST5089 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base CONDITIONS open emitter MARKING CODE(1) ∗1Q ∗1R Fig.1
1 Top view
handbook, halfpage
PMST5088; PMST5089
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
2
MAM062
Simplified outline (SC-70; SOT323) and symbol.
MIN. − − − − − − − − − −65 − −65
MAX. 35 30 30 25 4.5 100 200 100 200 +150 150 +150 V V V V V
UNIT
mA mA mA mW °C °C °C
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose
transistors
THERMA...