Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST2222; PMST2222A NPN switching transistors
Product specification Supersedes data of 1997 Jul 14 1999 Apr 22
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P
handbook, halfpage
PMST2222; PMST2222A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
1 Top view 2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST2222 PMST2222A VCEO collector-emitter voltage PMST2222 PMST2222A VEBO emitter-base voltage PMST2222 PMST2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 200 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN. MAX. UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST2222 collector cut-off current PMST2222A IEBO hFE collector cut-off current DC current gain PARAMETER thermal resistance from junction to ambient
PMST2222; PMST2222A
CONDITIONS note 1
VALUE 625
UNIT K/W
CONDITIONS IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tj = 125 °C IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 − − − − −
MIN.
MAX. 10 10 10 10 10 − − − − − 300 − − 400 1.6 300 1 1.3 2.6 1.2 2 8 30 25 − −
UNIT nA µA nA µA nA
35 50 75 50 100 30 40
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
DC current gain PMST2222 PMST2222A VCEsat collector-emitter saturation voltage PMST2222 collector-emitter saturation voltage PMST2222A VBEsat base-emitter saturation voltage PMST2222 base-emitter saturation voltage PMST2222A Cc Ce collector capacitance emitter capacitance PMST2222 PMST2222A fT transition frequency PMST2222 PMST2222A
IC = 500 mA; VCE = 10 V; note 1
IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz
− − − − − − 0.6 − − − −
mV V mV V V V V V pF pF pF MHz MHz
IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
SYMBOL F
PARAMETER noise figure
CONDITIONS IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz −
MIN.
MAX. 4
UNIT dB
Switching times (between 10% and 90% levels); (see Fig.2) ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − − − − − − 35 15 20 250 200 60 ns ns ns ns ns ns
ndbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Ω Vi R1 R2
RC Vo (probe) 450 Ω DUT oscilloscope
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMST2222; PMST2222A
SOT323
D
B
E
A
X
y
HE
v M A
3
Q
A
A1 c
1
e1 e bp
2
w M B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 22
5
Philips Semiconductors
Product specification
NPN switching transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PMST2222; PMST2222A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet .