DatasheetsPDF.com

PMST2222 Dataheets PDF



Part Number PMST2222
Manufacturers Philips
Logo Philips
Description NPN Transistor
Datasheet PMST2222 DatasheetPMST2222 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors Product specification Supersedes data of 1997 Jul 14 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistors FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222.

  PMST2222   PMST2222



Document
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors Product specification Supersedes data of 1997 Jul 14 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistors FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P handbook, halfpage PMST2222; PMST2222A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 Top view 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST2222 PMST2222A VCEO collector-emitter voltage PMST2222 PMST2222A VEBO emitter-base voltage PMST2222 PMST2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 200 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN. MAX. UNIT 1999 Apr 22 2 Philips Semiconductors Product specification NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST2222 collector cut-off current PMST2222A IEBO hFE collector cut-off current DC current gain PARAMETER thermal resistance from junction to ambient PMST2222; PMST2222A CONDITIONS note 1 VALUE 625 UNIT K/W CONDITIONS IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tj = 125 °C IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 − − − − − MIN. MAX. 10 10 10 10 10 − − − − − 300 − − 400 1.6 300 1 1.3 2.6 1.2 2 8 30 25 − − UNIT nA µA nA µA nA 35 50 75 50 100 30 40 IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 DC current gain PMST2222 PMST2222A VCEsat collector-emitter saturation voltage PMST2222 collector-emitter saturation voltage PMST2222A VBEsat base-emitter saturation voltage PMST2222 base-emitter saturation voltage PMST2222A Cc Ce collector capacitance emitter capacitance PMST2222 PMST2222A fT transition frequency PMST2222 PMST2222A IC = 500 mA; VCE = 10 V; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − − − − − 0.6 − − − − mV V mV V V V V V pF pF pF MHz MHz IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 1999 Apr 22 3 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A SYMBOL F PARAMETER noise figure CONDITIONS IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − MIN. MAX. 4 UNIT dB Switching times (between 10% and 90% levels); (see Fig.2) ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − − − − − − 35 15 20 250 200 60 ns ns ns ns ns ns ndbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1999 Apr 22 4 Philips Semiconductors Product specification NPN switching transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMST2222; PMST2222A SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 22 5 Philips Semiconductors Product specification NPN switching transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PMST2222; PMST2222A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet .


PMSS3906 PMST2222 PMST2222A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)