PMD18K

PMD18K SERIES NPN PMD19K SERIES PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD18K, PMD19K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for power switching applications. These devices are designed to be electrical/mechanical equivalents to Lambda part numbers. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation (TC=50°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC PMD18K80 PMD18K100 PMD19K80 PMD19K100 80 100 80 100 80 100 5.0 30 60 750 240 -65 to +200 0.625 UNITS V V V V A A mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICER VCE=54V, RBE=2.2kΩ (PMD18K, 19K80) ICER VCE=67V, RBE=2.2kΩ (PMD18K, 19K100) IEBO VEB=5.0V BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80 BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100 BVCEO IC=100mA (PMD18K, 19K80) 80 BVCEO IC=100mA (PMD18K, 19K100) 100 VCE(SAT) IC=15A, IB=60mA VBE(SAT) IC=15A, IB=60mA VBE(ON) VCE=3.0V, IC=15A hFE VCE=3.0V, IC=15A (PMD18K series) 1.0K hFE VCE=3.0V, IC=15A (PMD19K series) 800 hfe VCE=3.0V, IC=9.0A, f=1.0kHz 300 fT...