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PMBZ5249B Dataheets PDF



Part Number PMBZ5249B
Manufacturers Philips
Logo Philips
Description Voltage regulator diodes
Datasheet PMBZ5249B DatasheetPMBZ5249B Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBZ5226B to PMBZ5257B Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. handbook, halfpage 2 PMBZ5226B to PM.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBZ5226B to PMBZ5257B Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. handbook, halfpage 2 PMBZ5226B to PMBZ5257B PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION 1 2 n.c. 1 3 DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. MARKING TYPE NUMBER PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗8A ∗8B ∗8C ∗8D ∗8E ∗8F ∗8G ∗8H TYPE NUMBER PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B MARKING CODE(1) ∗8J ∗8K ∗8L ∗8M ∗8N ∗8P ∗8Q ∗8R TYPE NUMBER PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B MARKING CODE(1) ∗8S ∗8T ∗8U ∗8V ∗8W ∗8X ∗8Y ∗8Z TYPE NUMBER PMBZ5250B PMBZ5251B PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B MARKING CODE 81A 81B 81C 81D 81E 81F 81G 81H 3 Top view MAM243 Fig.1 Simplified outline (SOT23) and symbol. 1999 May 17 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Notes 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PARAMETER continuous forward current PMBZ5226B to PMBZ5257B CONDITIONS − MIN. see Table “Per type” − − − −65 − MAX. 200 UNIT mA non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 Tamb = 25 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 300 250 40 +150 150 mW mW W °C °C CONDITIONS IF = 200 mA; see Fig.3 MAX. 1.1 UNIT V 1999 May 17 3 1999 May 17 4 Philips Semiconductors Per type Tj = 25 °C unless otherwise specified. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE rdif (Ω) at IZ(2) IZtest (mA) VZ (V)(1) at IZtest at IZ = 0.25 mA NOM. PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B PMBZ5250B PMBZ5251B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 MAX. 1600 1700 1900 2000 2000 2000 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 TYP. −0.064 −0.065 −0.063 −0.058 −0.047 −0.013 +0.023 +0.023 +0.039 +0.040 +0.047 +0.052 +0.053 +0.055 +0.055 +0.058 +0.062 +0.065 +0.067 +0.073 +0.073 +0.073 +0.078 +0.078 +0.080 +0.080 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 60 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 3.0 Voltage regulator diodes TYPE No. PMBZ5226B to PMBZ5257B 3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5 1.25 Product specification 1999 May 17 5 Philips Semiconductors TYPE No. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE at IZ(2) rdif (Ω) IZtest (mA) VZ (V)(1) at IZ = 0.25 mA at IZtest NOM. MAX. 600 600 600 600 600 700 TYP. +0.081 +0.082 +0.085 +0.085 +0.085 +0.085 5.2 5.0 4.6 4.5 4.2 3.8 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 55 55 50 50 50 45 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 18 19 21 21 23 25 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.0 1.0 1.0 0.9 Voltage regulator diodes PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B Notes 24 25 27 28 30 33 1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C. PMBZ5226B to PMBZ5257B Product specifi.


PMBZ5248B PMBZ5249B PMBZ5250B


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