PMBTH81

DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES Low cost High transition frequency. 1 DESCRIPTION The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its complement is the PMBTH10. 2 3 PINNING PIN base emitter collector 1 Top view PMBTH81 DESCRIPTION Code: V31 fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot Cce Ccb fT Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage total power dissipation collector-emitter capacitance collector-base capacitance transition frequency open base Ts = 45 °C (note 1) VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter − − − − − 600 MIN. MAX. 20 20 400 0.65 0.85 − V V mW pF pF MHz UNIT September 1995 2 Philips Semiconductors Product specification PNP 1 GHz switching transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Ts = 45 °C (note 1) open emitter open base open collector CONDITION...