DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA64 PNP Darlington transistor
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA64
PNP Darlington
transistor
Product specification Supersedes data of 1998 Jul 21 1999 Apr 13
Philips Semiconductors
Product specification
PNP Darlington
transistor
FEATURES High current (max. 500 mA) Low voltage (max. 30 V) High DC current gain (min. 10000). APPLICATIONS High input impedance preamplifiers. DESCRIPTION
PNP Darlington
transistor in a SOT23 plastic package.
NPN complement: PMBTA14. MARKING TYPE NUMBER PMBTA64 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2V PINNING PIN 1 2 3 base emitter collector
PMBTA64
DESCRIPTION
handbook, halfpage
3
1
3
TR1 TR2 1 Top view 2 2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. −30 −30 −10 −500 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 13
2
Philips Semiconductors
Product specification
PNP Darlington
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Tr...