PMBT6428

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT6428; PMBT6429 NPN general purpose transistors Product specification Supersedes data of 1997 Apr 02 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification Telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage PMBT6428; PMBT6429 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMBT6428 PMBT6429 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline SOT23 and symbol. MARKING CODE(1) ∗1K ∗1L Top view 1 2 MAM255 2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMBT6428 PMBT6429 VCEO collector-emitter voltage PMBT6428 PMBT6429 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 50 45 6 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 60 55 V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN ...