PMBT2222A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2222; PMBT2222A NPN switching transistors Product specification Supersedes data of 1997 Sep 09 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: PMBT2907 and PMBT2907A. MARKING TYPE NUMBER PMBT2222 PMBT2222A Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P Top view handbook, halfpage PMBT2222; PMBT2222A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMBT2222 PMBT2222A VCEO collector-emitter voltage PMBT2222 PMBT2222A VEBO emitter-base voltage PMBT2222 PMBT2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 250 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specificat...