PMBFJ212

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES High speed switching Interchangeability of drain and source connections High impedance. APPLICATIONS Analog switches Choppers, multiplexers and commutators Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PMBFJ210; PMBFJ211; PMBFJ212 PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage 3 d s g 1 Top view 2 MAM385 Marking codes: PMBFJ210: M68. PMBFJ211: M69. PMBFJ212: M70. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage PMBFJ210 PMBFJ211 PMBFJ212 IDSS drain current PMBFJ210 PMBFJ211 PMBFJ212 Ptot yfs total power dissipation common-source transfer admittance PMBFJ210 PMBFJ211 PMBFJ212 Tamb ≤ 25 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 − 15 20 40 250 mA mA mA mW ID = 1 nA; VDS = 15 V −1 −2.5 −4 −3 −4.5 −6 V V V CONDITIONS − MIN. MAX. ±25 UNIT V 1997 Dec 01 2 Ph...