PMBF4393

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING 1 2 3 = drain = source = gate PMBF4391; PMBF4392; PMBF4393 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Note 1. Drain and source are interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23. QUICK REFERENCE DATA PMBF4391 Drain-source voltage Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Feedback capacitance at f = 1 MHz −VGS = 12 V; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 ID = 12 mA; −VGSM = 12 V ID = 6 mA; −VGSM = 7 V ID = 3 mA; −VGSM = 5 V toff toff toff < < < 20 − − − 35 − − − 50 ns ns ns Crs < 3.5 3.5 3.5 pF Rds on < 30 60 100 Ω −V(P)GS > < 4 10 2 5 0.5 3 V V IDSS > 50 25 5 mA ± VDS max. 40 PMBF4392 40 PMBF4393 40 V April 1995 2 Philips Semiconductors Product specification N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-...