PMBD6050

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode Product specification Supersedes data of 1996 Sep 18 1999 May 11 Philips Semiconductors Product specification High-speed diode FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 70 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in thick and thin-film circuits. 3 Marking code: p5A = made in Hong Kong; t5A = made in Malaysia. handbook, halfpage 2 PMBD6050 DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode 1 2 n.c. 3 MAM185 1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 250 +150 150 A A A mW °C °C note 1; see Fig.2 CONDITIONS − − − − MIN. MAX. 85 70 215 500 V V mA mA UNIT 1999 May 11 2 ...