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NTE5566 Dataheets PDF



Part Number NTE5566
Manufacturers NTE
Logo NTE
Description Silicon Controlled Rectifiers
Datasheet NTE5566 DatasheetNTE5566 Datasheet (PDF)

NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR’s) Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud TO–48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE5566   NTE5566


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NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR’s) Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud TO–48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non–Repetitive) On–State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Peak Gate–Power Dissipation (IGT ≤ for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Peak Off–State Current Maximum On–State Voltage (Peak) DC Holding Current DC Gate Trigger Current DC Gate Controlled Turn–On Time Critical Rate of Rise of Off–State Voltage Symbol IDRM, IRRM VTM IHO IGT TGT Critical dv/dt Test Conditions TJ = +100°C, Gate Open, VDRM &VRRM TC = +25°C TC = +25°C, Gate Open Anode Voltage = 12Vdc, RL = 30Ω, TC =+ 25°C IGT = 150mA , tD+tR TC = +100°C, Gate Open Min – – – – – – Typ – – – – 2.5 100 Max Unit 2.0 1.6 50 30 – – mA V mA mA µs V/µs .562 (14.28) Max Cathode Anode Gate 1.260 (32.0) Max .595 (15.1) Max .445 (11.3) Max 1/4–28 UNF–2A Isolated Stud .


NTE5564 NTE5566 NTE5567


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