NTE553

NTE553 Schottky Barrier Diode Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35V Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to + 60°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –45° to + 125°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Reverse Breakdown Voltage Reverse Leakage Current Forward Voltage Diode Capacitance Series Resistance Series Inductance Symbol V(BR)R IR VF CT RS LS Test Conditions IR = –10µA VR = –25V IF = 10mA VR = –6V, f = 1MHZ IF = 2mA, f = 100MHZ f = 250MHZ Min –35 – – – – – Typ – – – – – 3 Max – –0.1 1.0 1.2 1.2 – Unit V µA V pf Ω nH 1.000 (25.4) Min .200 (5.08) Max .022 (0.509) Dia Max .090 (2.28) Dia Max Color Band Denotes Cathode ...