NTE466 Silicon N–Channel JFET Transistor Chopper, High Speed Switch
Absolute Maximum Ratings: Drain–Source Voltage, VDS ...
NTE466 Silicon N–Channel JFET
Transistor Chopper, High Speed Switch
Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) ID(off) VGS = –20V, VDS = 0 VGS = –20V, VDS = 0, TA = +150°C Gate–Source Cutoff Voltage Drain Cutoff Current VDS = 15V, ID = 0.5nA VDS = 15V, VGS = –10V VDS = 15V, VGS = –10V, TA = +150°C ON Characteristics Zero–Gate–Voltage Drain Current Drain–Sour...
