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NTE460 Dataheets PDF



Part Number NTE460
Manufacturers NTE
Logo NTE
Description Silicon P-Channel JFET Transistor
Datasheet NTE460 DatasheetNTE460 Datasheet (PDF)

NTE460 Silicon P–Channel JFET Transistor AF Amp Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

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NTE460 Silicon P–Channel JFET Transistor AF Amp Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 10µA, VDS = 0 IGSS VGS = 10V, VDS = 0 VGS = 10V, VDS = 0, TA = +150°C ON Characteristics Zero–Gate–Voltage Drain Current Gate–Source Voltage Drain–Source Resistance Small–Signal Characteristics Forward Transfer Admittance |yfs| |yos| |yrs| |yis| Ciss NF VDS = 10V, ID = 2mA, f = 1kHz, Note 1 VDS = 10V, ID = 2mA, f = 10MHz, Note 1 Output Admittance Reverse Transfer Conductance Input Conductance Inpu Capacitance Functional Characteristics Noise Figure VDS = –5V, ID = 1mA, Rg = 1MΩ, f = 1kHz – – 3.0 dB VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, VGS = 1V, f = 1MHz 1500 1350 – – – – – – – – – – 3000 µmhos – 40 0.1 0.2 20 µmhos µmhos µmhos µmhos pF IDSS VGS rDS VDS = –10V, VGS = 0, Note 1 VDG = –15V, ID = 10µA ID = 100µA, VGS = 0 2.0 – – – – – 6.0 6.0 800 mA V Ω 20 – – – – – – 10 10 V nA µA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: PulseWidth ≤ 630ms, Duty Cycle ≤ 10%. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45° Case .040 (1.02) .


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