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NTE312 Dataheets PDF



Part Number NTE312
Manufacturers NTE
Logo NTE
Description N-Channel Silicon Junction Field Effect Transistor
Datasheet NTE312 DatasheetNTE312 Datasheet (PDF)

NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross–Modulation Minimized by Square–Law Transfer Characteris.

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NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross–Modulation Minimized by Square–Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current Gate 1 Leakage Current Gate–Source Cutoff Voltage ON Characteristics Zero–Gate Voltage Drain Current Small–Signal Characteristics Forward Transfer Admittance Input Admittance |yfs| Re(yis) VDS = 15V, VGS = 0, f = 1kHz 100MHz VDS = 15V, VGS = 0 400MHz Output Admittance Output Conductance |yos| Re(yos) VDS = 15V, VGS = 0, f = 1kHz 100MHz VDS = 15V, VGS = 0 400MHz Forward Transconductance Input Capacitance Reverse Transfer Capacitance Input Susceptance Re(yfs) Ciss Crss IM(Yis) VDS = 15V, VGS = 0, f = 400MHz VDS = 15V, VGS = 0, f = 1.0MHz VDS = 15V, VGS = 0, f = 1.0MHz 100MHz VDS = 15V, VGS = 0 400MHz Functional Characteristics Noise Figure NF 100MHz VDS = 15V, ID = 5mA, RiG = 1kΩ 400MHz 100MHz VDS = 15V, ID = 5mA, RiG = 1kΩ 400MHz 100MHz VDS = 15V, VGS = 0 400MHz – – 18 10 – – – – – – – – 2.0 4.0 – – 1000 4000 dB dB dB dB µmhos µmhos 4500 – – – – – 4000 – – – – – – – – – – – – – – – 7500 100 1000 50 75 100 – 4.5 1.0 3.0 12.0 µmhos µmhos µmhos µmhos µmhos µmhos µmhos pF pF mmho mmho I.



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