NTE3081

NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6000V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4242V Steady–State Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3200V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Infrared Emitting Diode (Emitter) Forward Current, IF Continuous . . . . . . . . . ....