Document
NTE2593 Silicon NPN Transistor High Voltage Amp/Switch
Features: D High Breakdown Voltage: V(BR)CEO = 2100V Min D Low Output Capacitance D Wide ASO Range D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Output Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 2100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500µA VCE = 10V, IC = 500µA IC = 1mA, IB = 200µA IC = 1A, IB = 200µA Min – – 10 – – – 2100 2100 5 – – 6 – – – – – 1.3 Typ – Max 1 1 60 – 5 2 – – – – MHz V V V V V pF Unit µA µA
V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 Cob VCB = 100V, f = 1MHz
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE = ∞
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
B
C
E
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
.