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NTE253

Part Number	NTE253
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) a...
Datasheet	NTE253 PDF File

Overview

NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.
Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO .
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80V Collector–Base Voltage, VCB .
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