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NTE2506 Dataheets PDF



Part Number NTE2506
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE2506 DatasheetNTE2506 Datasheet (PDF)

NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V Collector–Emitter Voltage, VC.

  NTE2506   NTE2506



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NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Power Dissipation (TS ≤ +85°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Soldering Point (TS ≤ +85°C, Note 1), RthJS . . . . . . . . . . 18K/W Note 1. TS is the temperature at the soldering point of the collector lead. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Symbol V(BR)CBO IC = 0.1mA V(BR)CEO IC = 10mA V(BR)CER IC = 10mA, RBE = 100Ω Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 0.1mA ICES ICBO DC Current Gain Transition Frequency Collector–Base Capacitance Collector Capacitance hFE fT Ccb Cc IB = 0, VCE = 50V IE = 0, VCB = 50V IC = 100mA, VCE = 10V, TA = +25°C IC = 100mA, VCE = 10V, f = 100MHz, TA = +25°C IC = 0, VCB = 10V, f = 1MHz, TA = +25°C IE = ie = 0, VCB = 10V f = 1MHz Test Conditions Min 115 95 110 3 – – 20 0.8 – – Typ – – – – – – 35 1.2 2.0 3.5 Max Unit – – – – 100 20 – – – – GHz pF pF V V V V µA µA .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max .


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