DatasheetsPDF.com

NTE2411 Dataheets PDF



Part Number NTE2411
Manufacturers NTE
Logo NTE
Description Silicon PNP Transistor
Datasheet NTE2411 DatasheetNTE2411 Datasheet (PDF)

NTE2411 Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) Description: The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE2411   NTE2411



Document
NTE2411 Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) Description: The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. FR–5 = 1.0 x 0.75 x 0.62 in. Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 100µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 ICBO VCB = 100V, IE = 0 VCB = 100V, IE = 0, TA = +100°C 150 160 5 – – – – – – – – – – 50 50 V V V nA µA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V IC = 50mA, VCE = 5V Collector–Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Base–Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Small Signal Current gain Noise Figure fT Cobo hfe NF IC = 10mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz IC = 1mA, VCE = 10V, f = 1kHz IC = 200µA, VCE = 5V, RS = 10Ω, f = 10Hz to 15.7kHz 100 – 40 – – – – – 300 6 200 8 dB MHz .


NTE2410 NTE2411 NTE2412


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)