NTD3055L104G

NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 104 mW N−Channel D ID MAX 12 A Pb−Free Packages are Available Lower RDS(on) Lower VDS(on) Tighter VSD Specification Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge Power Supplies Converters Power Motor Controls Bridge Circuits Typical Applications G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage, Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "15 "20 12 10 45 48 0.32 2.1 1.5 −55 to +175 61 Unit Vdc Vdc Vdc 1 2 3 Adc Apk W W/°C W W °C mJ 4 DPAK CASE 369C STYLE...