NTD3055L104

NTD3055L104, NTDV3055L104 MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower RDS(on) Lower VDS(on) Tighter VSD Specification Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV and STDV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage, Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS 60 Vdc VDGR 60 Vdc VGS "15 Vdc VGS "20 ID ID IDM PD TJ, Tstg 12 10 45 48 0.32 2.1 1.5 −55 to +175 Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction...