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NTB85N03T4

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Power MOSFET

NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switc...


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NTB85N03T4

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Description
NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com Power Supplies Converters Power Motor Controls Bridge Circuits 85 AMPERES 28 VOLTS RDS(on) = 6.1 mW (Typ.) N−Channel D Value 28 "20 85* 190 80 0.66 −55 to +150 733 Adc Apk W W/°C °C 1 TO−220AB CASE 221A Style 5 2 3 Unit Vdc Vdc VGS ID IDM PD TJ, Tstg G 4 S 1 2 3 D2PAK CASE 418AA Style 2 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TC = 25°C − Single Pulse (tp = 10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH, IL(pk) = 17 A, RG = 25 W) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS mJ MARKING DIAGRAMS & PIN ASSIGNMENTS °C/W RqJC RqJA TL 1.55 70 260 °C NTx85N03 LLYWW 1 Gate 2 Drain 3 Source 1 Gate NTx85N03 LLYWW 4 Drain 4 Drain 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). *Chip current capability limited by package. 2 Drain 3 Source NTx85N03 x LL Y WW = Device Code = P or B = Location Code = Year = Work W...




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