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NNCD7.5D Dataheets PDF



Part Number NNCD7.5D
Manufacturers NEC
Logo NEC
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
Datasheet NNCD7.5D DatasheetNNCD7.5D Datasheet (PDF)

DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3D to NNCD12D ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for external interface circuit protection. Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini Mold Package having allowab.

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DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3D to NNCD12D ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for external interface circuit protection. Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini Mold Package having allowable power dissipation of 200 mW. PACKAGE DIMENSIONS (in millimeters) 2.5 ± 0.15 1.7 ± 0.1 FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). 0.9 ± 0.1 0 ± 0.05 0.19 Cathode Indication APPLICATIONS • Circuits for Waveform clipper, Surge absorber. 0.11+0.05 –0.01 • External interface circuit E.S.D protection. MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 85 W (tT = 10 µs 1 pulse) 150 °C –55 °C to +150 °C Fig. 6 Document No. D11772EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan © 0.3 ± 0.05 1.25 ± 0.1 1996 NNCD3.3D to NNCD12D ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Dynamic ImpedanceNote 2 Zz (Ω) MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3D NNCD3.6D NNCD3.9D NNCD4.3D NNCD4.7D NNCD5.1D NNCD5.6D NNCD6.2D NNCD6.8D NNCD7.5D NNCD8.2D NNCD9.1D NNCD10D NNCD11D NNCD12D 3.10 3.40 3.70 4.00 4.40 4.82 5.29 5.84 6.44 7.03 7.73 8.53 9.42 10.40 11.38 MAX. 3.50 3.80 4.10 4.49 4.92 5.39 5.94 6.55 7.17 7.87 8.67 9.58 10.58 11.60 12.64 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Reverse Leakage IR (µA) Capacitance Ct (pF) TEST CONDITION E.S.D Voltage (kV) TEST CONDITION MAX. 20 10 10 10 10 5 5 5 2 2 2 2 2 2 2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70 MIN. 30 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 30 30 30 Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal. 2 NNCD3.3D to NNCD12D TYPICAL CHARACTERISTICS (TA = 25 °C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 P - Power Dissipation - mW 200 30 × 30 × 1.6 P.C.B. (Glass Epoxy) 150 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Fig. 2 IT - VBR CHARACTERISTICS NNCD7.5D NNCD8.2D NNCD6.8D NNCD9.1D Fig. 3 IT - VBR CHARACTERISTICS 100 m NNCD3.3D NNCD3.6D 10 m NNCD3.9D NNCD4.3D IT - On State Current - A 100 m 10 m IT - On State Current - A NNCD11D NNCD10D NNCD12D 1m NNCD4.7D 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1D NNCD5.6D NNCD6.2D 1m 100 µ 10 µ 1µ 100 n 10 n 1n 0 1 2 3 4 5 6 7 8 9 10 0 7 8 9 10 11 12 .


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