NMT2907

PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discrete POWER & Signal Technologies PN2907A MMBT2907A C PZT2907A C E C B E C B TO-92 E SOT-23 Mark: 2F B SOT-223 MMPQ2907 E B E B E B NMT2907 C2 E1 C1 C B2 E2 E B SOIC-16 C C C C C C C SOT-6 Mark: .2B B1 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 60 5.0 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ã 1997 Fairchild Semiconductor Corporation PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltag...