SRC1210

Semiconductor SRC1210 NPN Silicon Transistor Descriptions Switching application Interface circuit and driver circuit application Features With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRC1210 Marking SRC1210 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm Equivalent Circuit C(OUT) 4.5±0.1 0.4±0.02 2.06±0.1 B(IN) R1 14.0±0.40 R1 = 4.7KΩ E(COMMON) 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 PIN Connections 1. Emitter 2. Collector 3. Base 0.38 KSR-9006-001 1 SRC1210 Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings 50 50 5 100 625 150 -55 ~ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA - Min. Typ. Max. 120 0.1 250 4.7 500 500 0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-9006-001 2 ...