Semiconductor
SRA2212S
PNP Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circ...
Semiconductor
SRA2212S
PNP Silicon
Transistor
Descriptions
Switching application Interface circuit and driver circuit application
Features
With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRA2212S Marking RAB Package Code SOT-23
Outline Dimensions
2.4±0.1 1.30±0.1
unit : mm
Equivalent Circuit
C(OUT)
1
1.90 Typ.
3 2
2.9±0.1
B(IN)
R1
R1 = 100KΩ 0.4 Typ. 0.45~0.60
E(COMMON) 0.2 Min.
1.12 Max.
0.38
0~0.1
0.124
-0.03 +0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KSR-2039-000
1
SRA2212S
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 200 150 -55 ~ 150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA -
Min. Typ. Max.
120 -0.1 250 100 -500 -500 -0.3 -
Unit
nA nA V MHz KΩ
R1
* : Characteristic of
Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-2039-000
2
...