Semiconductor
SRA2210U
PNP Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circ...
Semiconductor
SRA2210U
PNP Silicon
Transistor
Descriptions
Switching application Interface circuit and driver circuit application
Features
With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRA2210U Marking AR Package Code SOT-323
Outline Dimensions
unit : mm
Equivalent Circuit
2.1±0.1 1.25±0.05 C(OUT)
1
1.30±0.1 2.0±0.2
3
0.30±0.1
B(IN)
R1
2
0.15±0.05
R1 = 4.7KΩ
0.90±0.1
E(COMMON) 0~0.1 0.1 Min.
KSR-3027-000
1
SRA2210U
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 200 150 -55 ~ 150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA -
Min. Typ. Max.
120 -0.1 250 4.7 -500 -500 -0.3 -
Unit
nA nA V MHz KΩ
R1
* : Characteristic of
Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-3027-000
2
...